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參數(shù)資料
| 型號(hào)： | Si4434DY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 250-V (D-S) MOSFET |
| 中文描述： | N溝道250 -五（副）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | SI4434DY-E3 |
FEATURES
PWM-OptimizedTrenchFET Power MOSFET
100% R
g
Tested
Avalanche Tested
APPLICATIONS
Primary Side Switch In:
Telecom Power Supplies
Distributed Power Architectures
Miniature Power Modules
Si4434DY
Vishay Siliconix
New Product
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
www.vishay.com
1
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
250
0.155 @ V
GS
= 10 V
0.162 @ V
GS
= 6.0 V
3.0
2.9
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4434DY—E3
Si4434DY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
250
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
3.0
2.1
T
A
= 70 C
2.4
1.7
Pulsed Drain Current
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
2.6
1.3
Avalanche Current
L = 0.1 mH
I
AS
13
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
8.4
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.1
1.56
W
T
A
= 70 C
2.0
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
40
Steady State
65
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si4434DY-T1-E3 | N-Channel 250-V (D-S) MOSFET |
| SI4453DY-T1 | P-Channel 12-V (D-S) MOSFET |
| SI4453DY | P-Channel 12-V (D-S) MOSFET |
| SI4463BDY | P-Channel MOSFET, 2.5 V(G-S) , -20V(D-S) |
| Si4463BDY-E3 | P-Channel 2.5-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4434DY-RC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:R-C Thermal Model Parameters |
| SI4434DY-T1-E3 | 功能描述:MOSFET 250V 3.0A 0.155Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4434DY-T1-GE3 | 功能描述:MOSFET 250V 3.0A 3.1W 155mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si4435BDY | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 30V 7A 8-Pin SOIC N |
| SI4435BDY_1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
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