參數(shù)資料
型號: SI4431ADY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 30-V (D-S) MOSFET
中文描述: P溝道30V的MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 42K
代理商: SI4431ADY
FEATURES
TrenchFET Power MOSFET
Si4431ADY
Vishay Siliconix
Document Number: 71803
S-95713—Rev. C, 18-Feb-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.030 @ V
GS
= -10 V
-7.2
0.052 @ V
GS
= -4.5 V
-5.5
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-7.2
-5.3
T
A
= 70 C
-5.8
-4.2
A
Pulsed Drain Current
I
DM
-30
continuous Source Current (Diode Conduction)
a
I
S
-2.1
-1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.35
W
T
A
= 70 C
1.6
0.87
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
35
50
Steady State
75
92
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
17
25
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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參數(shù)描述
SI4431ADY-E3 功能描述:MOSFET 30V 7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4431ADY-T1 功能描述:MOSFET 30V 7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4431ADY-T1-E3 功能描述:MOSFET 30V 7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4431ADY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4431-B1 制造商:SILABS 制造商全稱:SILABS 功能描述:Si4430/31/32 ISM TRANSCEIVER