參數(shù)資料
型號(hào)： SI4427BDY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： Male Disconnect Solderless Terminal; Wire Size (AWG):16-14; Approval Bodies:UL, CSA; Body Material:ETP Copper; Body Plating:Tin; Features:Butted seam; Length:0.64"; Terminal Type:Solderless; Thickness:0.020"; Voltage Rating:600V RoHS Compliant: Yes
中文描述： P溝道30 V的（副）MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 54K
代理商： SI4427BDY-T1
FEATURES
TrenchFET Power MOSFETS
Si4427BDY
Vishay Siliconix
New Product
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0105 @ V
GS
= -10 V
-12.6
-30
0.0125 @ V
GS
= -4.5 V
-11.5
0.0195 @ V
GS
= -2.5 V
-9.2
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information:
Si4427BDY
Si4427BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-12.6
-9.7
T
A
= 70 C
-10.1
-7.7
A
Pulsed Drain Current
I
DM
-50
continuous Source Current (Diode Conduction)
a
I
S
-2.5
-1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.5
W
T
A
= 70 C
1.6
0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
40
50
Steady State
70
85
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
18
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
SI4427DY P-Channel 30-V (D-S) MOSFET
SI4430DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4431ADY P-Channel 30-V (D-S) MOSFET
SI4431 P-Channel Logic Level PowerTrench MOSFET
SI4431DY P-Channel Logic Level PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4427BDY-T1-E3 功能描述:MOSFET 30V 13.3A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4427BDY-T1-GE3 功能描述:MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4427DY 功能描述:MOSFET 30V 13.3A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4427DY_05 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI4427DY-E3 功能描述:MOSFET 30V 13.3A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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