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參數(shù)資料
| 型號： | Si4418DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) MOSFET |
| 中文描述： | N溝道200 -五（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | SI4418DY-T1-E3 |
FEATURES
TrenchFET Power MOSFET
100% Rg
Tested
APPLICATIONS
Primary Side Switch
Si4418DY
Vishay Siliconix
New Product
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
200
0.130 @ V
GS
= 10 V
0.142 @ V
GS
= 6.0 V
3
2.8
N-Channel MOSFET
G
D
S
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4418DY—E3
Si4418DY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
3
2.3
T
A
= 85 C
2.1
1.6
A
Pulsed Drain Current
I
DM
12
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
6
Single Avalanche Energy (Duty Cycle
1%)
E
AS
1.8
mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.25
A
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.5
W
T
A
= 85 C
1.3
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
36
50
Steady State
71
85
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI4425DY | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4418DY-T1-GE3 | 功能描述:MOSFET 200V 3.0A 2.5W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4420BDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4420BDY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4420BDY-T1-E3 | 功能描述:MOSFET 30V 13.5A 0.0085Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4420BDY-T1-GE3 | 功能描述:MOSFET 30V 13.5A 2.5W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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