參數(shù)資料
型號: Si4123G-BT*
廠商: Electronic Theatre Controls, Inc.
英文描述: DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS
中文描述: 雙波段射頻合成器集成的GSM和GPRS無線通訊和VCO
文件頁數(shù): 31/32頁
文件大小: 466K
Si4133G
Rev. 1.1
31
N
OTES
:
相關PDF資料
PDF描述
Si4133G-BM DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS
Si4133G-BT* DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS
Si4123G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS
Si4133G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS
Si4112G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS
相關代理商/技術參數(shù)
參數(shù)描述
SI4123GM-EVB 制造商:Silicon Laboratories Inc 功能描述:
SI4123M-EVB 功能描述:射頻開發(fā)工具 General Purpose RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
SI4124DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET
Si4124DY-T1-E3 功能描述:MOSFET 40V 20.5A 5.7W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube