型號: | Si4123G-BT* |
廠商: | Electronic Theatre Controls, Inc. |
英文描述: | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
中文描述: | 雙波段射頻合成器集成的GSM和GPRS無線通訊和VCO |
文件頁數(shù): | 25/32頁 |
文件大?。?/td> | 466K |
相關PDF資料 |
PDF描述 |
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Si4133G-BM | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
Si4133G-BT* | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
Si4123G | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
Si4133G | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
Si4112G | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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SI4123GM-EVB | 制造商:Silicon Laboratories Inc 功能描述: |
SI4123M-EVB | 功能描述:射頻開發(fā)工具 General Purpose RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
SI4124DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
Si4124DY-T1-E3 | 功能描述:MOSFET 40V 20.5A 5.7W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |