- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373395 > Si4123G-BT* (Electronic Theatre Controls, Inc.) DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS PDF資料下載
參數(shù)資料
| 型號： | Si4123G-BT* |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| 中文描述： | 雙波段射頻合成器集成的GSM和GPRS無線通訊和VCO |
| 文件頁數(shù)： | 1/32頁 |
| 文件大?。?/td> | 466K |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
Rev. 1.1 4/01
Copyright 2001 by Silicon Laboratories
Si4133G-DS11
Si4133G
Si4123G/22G/13G/12G
D
UAL
-B
AND
RF S
YNTHESIZER
W
ITH
I
NTEGRATED
VCO
S
F
OR
GSM
AND
GPRS W
IRELESS
C
OMMUNICATIONS
Features
Applications
Description
The Si4133G is a monolithic integrated circuit that performs both IF and
dual-band RF synthesis for GSM and GPRS wireless communications
applications. The Si4133G includes three VCOs, loop filters, reference and
VCO dividers, and phase detectors. Divider and power down settings are
programmable through a three-wire serial interface.
Functional Block Diagram
!
Dual-Band RF Synthesizers
"
RF1: 900 MHz to 1.8 GHz
"
RF2: 750 MHz to 1.5 GHz
IF Synthesizer
"
IF: 500 MHz to 1000 MHz
Integrated VCOs, Loop Filters,
Varactors, and Resonators
Minimal External Components
Required
!
!
!
!
!
!
!
!
!
!
Fast Settling Time: 140
μ
s
Low Phase Noise
Programmable Power Down Modes
1 μA Standby Current
18 mA Typical Supply Current
2.7 V to 3.6 V Operation
Packages: 24-Pin TSSOP and
28-Pin MLP
!
GSM, DCS1800, and PCS1900
Cellular Telephones
!
!
GPRS Data Terminals
HSCSD Data Terminals
IFOUT
IFLA
IFLB
RFLC
RFLD
RFLA
RFLB
RFOUT
XIN
PWDNB
SDATA
SCLK
SENB
IF
RF2
RF1
÷
65
AUXOUT
÷
N
÷
N
÷
N
Phase
Detector
Phase
Detector
Phase
Detector
22-bit
Data
Register
Serial
Interface
Power
Down
Control
Reference
Amplifier
Test
Mux
Patents pending
Ordering Information:
See page 28.
Pin Assignments
Si4133G-BT
Si4133G-BM
S4133G-BT
SCLK
SDATA
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
GNDR
RFOUT
VDDR
SENB
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDNB
AUXOUT
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
4
5
6
7
1
2
3
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
G
S
S
S
V
I
G
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
G
G
R
V
A
P
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si4133G-BM | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| Si4133G-BT* | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| Si4123G | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| Si4133G | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| Si4112G | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4123GM-EVB | 制造商:Silicon Laboratories Inc 功能描述: |
| SI4123M-EVB | 功能描述:射頻開發(fā)工具 General Purpose RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| SI4124DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| Si4124DY-T1-E3 | 功能描述:MOSFET 40V 20.5A 5.7W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。