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參數(shù)資料
| 型號： | SI3493DV-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 60K |
| 代理商： | SI3493DV-T1 |
FEATURES
TrenchFET Power MOSFET: 1.8-V Rated
Ultra-Low On-Resistance
APPLICATIONS
Load Switch
PA Switch
Battery Switch
Si3493DV
Vishay Siliconix
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
0.027 @ V
GS
=
4.5 V
7
20
0.035 @ V
GS
=
2.5 V
6.2
21
0.048 @ V
GS
=
1.8 V
5.2
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
Ordering Information:
Si3493DV-T1
Si3493DV-T1—E3 (Lead (Pb)-Free)
93xxx
Marking Code:
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
7
5.3
T
A
= 85 C
3.6
3.9
A
Pulsed Drain Current
I
DM
20
Continuous Diode Current (Diode Conduction)
a
I
S
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 85 C
1.0
0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
45
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI3588DV | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3493DV-T1-E3 | 功能描述:MOSFET 20V 7.0A 2.0W 27mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3493DV-T1-GE3 | 功能描述:MOSFET 20V 7.0A 2.0W 27mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3495DV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET |
| SI3495DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET |
| SI3495DV-T1-E3 | 功能描述:MOSFET 20V 7.0A 2.0W 24mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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