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參數(shù)資料
| 型號： | SI3445DV |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | SI3445DV |
Si3445ADV
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72859
S-40582—Rev. A, 29-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
0.45
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
8 V, V
GS
= 0 V
1
A
V
DS
=
8 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
4.5 V
20
A
V
GS
=
4.5 V, I
D
=
5.8 A
0.034
0.042
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
2.5 V, I
D
=
4.9 A
0.050
0.060
V
GS
=
1.8 V, I
D
=
0.2
A
0.065
0.080
Forward Transconductance
a
g
fs
V
DS
=
4 V, I
D
=
5.8 A
16
S
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
12.5
19
Gate-Source Charge
Q
gs
V
DS
=
4 V,
V
GS
=
4.5 V, I
D
=
5.8 A
2.4
nC
Gate-Drain Charge
Q
gd
R
g
t
d(on)
2.6
Gate Resistance
f = 1 MHz
8
Turn-On Delay Time
20
30
Rise Time
t
r
V
=
4 V, R
L
= 4
1.0 A, V
GEN
=
4.5 V, R
g
= 6
40
60
Turn-Off Delay Time
t
d(off)
I
D
80
120
ns
Fall Time
t
f
60
90
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt = 100 A/ s
55
85
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
T
C
=
55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
1.5 V
1 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI3445DV_Q | 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3445DV-T1 | 功能描述:MOSFET 8V 5.6A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3445DV-T1-E3 | 功能描述:MOSFET 8V 5.6A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3445DV-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor |
| SI3445DV-T1-GE3 | 功能描述:MOSFET 8.0V 5.6A 2.0W 42mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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