- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373395 > Si3232-X-GQ (Electronic Theatre Controls, Inc.) DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING PDF資料下載
參數(shù)資料
| 型號： | Si3232-X-GQ |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING |
| 中文描述： | 兩個可編程的CMOS用戶接口與在線監(jiān)測 |
| 文件頁數(shù)： | 40/128頁 |
| 文件大?。?/td> | 2327K |
| 代理商： | SI3232-X-GQ |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁當前第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁
Si3232
40
Preliminary Rev. 0.96
which the RING lead oscillates. The dc offset is set at a
dc point equal to V
CM
– (–80 V + V
OFF
), where V
OFF
is
the value that is input into the RINGOF RAM location.
Positive V
OFF
values cause the dc offset point to move
closer to ground (lower dc offset), and negative V
OFF
values have the opposite effect. The dc offset can be
set to any value; however, the ringing signal is clipped
digitally if the dc offset is set to a value that is less than
half the ringing amplitude. In general, the following
equation must hold true to ensure the battery voltage is
sufficient to provide the desired ringing amplitude:
|V
BATR
| > |V
RING,PK
+ (–80 V + V
OFF
) + V
OVRING
|
It is possible to create reverse polarity unbalanced
ringing waveforms (the TIP lead oscillates while the
RING lead stays constant) by setting the UNBPOLR bit
of the RINGCON register. In this mode, the polarity of
V
OFF
must also be reversed (in normal ringing polarity,
V
OFF
is subtracted from –80 V, and in reverse polarity,
ringing V
OFF
is added to –80 V).
4.7.1. Ringing Coefficients
The ringing coefficients are calculated in decimal for
sinusoidal and trapezoidal waveforms. The RINGPHAS
and RINGAMP hex values are decimal-to-hex
conversions in 16-bit, 2’s complement representations
for their respective RAM locations.
To obtain sinusoidal RINGFREQ RAM values, the
RINGFREQ decimal number is converted to a 24-bit 2’s
complement value. The lower 12 bits are placed in
RINGFRLO bits 14:3. RINGFRLO bits 15 and 2:0 are
cleared to 0. The upper 12 bits are set in a similar
manner in RINGFRHI, bits 13:3. RINGFRHI bit 14 is the
sign bit and RINGFRHI bits 2:0 are cleared to 0.
For
example,
the
RINGFREQ = 0x7EFD9D are as follows:
RINGFRHI = 0x3F78
RINGFRLO = 0x6CE8
To obtain trapezoidal RINGFREQ RAM values, the
RINGFREQ decimal number is converted to an 8-bit, 2’s
complement value. This value is loaded into RINGFRHI.
RINGFRLO is not used.
register
values
for
Figure 19. Trapezoidal Ringing Waveform
4.7.2. Ringing DC Offset Voltage
A dc offset voltage can be added to the Si3232’s ac
ringing waveform by programming the RINGOF RAM
address to the appropriate setting. The value of
RINGOF is calculated as follows:
4.7.3. Linefeed Overhead Voltage Considerations
During Ringing
The ringing mode output impedance allows ringing
operation without overhead voltage modification
(V
OVR
= OV). If an offset of the ringing signal from the
RING lead is desired, V
OVR
can be used for this
purpose.
4.7.4. Ringing Power Considerations
The total power consumption of the Si3232/Si3200
chipset using internal ringing generation is dependent
on the V
DD
supply voltage, the desired ringing
amplitude, the total loop impedance, and the ac load
impedance (number of REN). The following equations
can be used to approximate the total current required
for each channel during ringing mode.
Where:
time
V
OFF
T=1/freq
t
RISE
V
TIP-RING
RINGOF
V
160.8
--------------
2
15
×
=
I
DD,AVE
V
Z
LOOP
----------------------
2
π
--
I
DD,OH
+
×
=
I
BAT,AVE
V
Z
LOOP
----------------------
2
π
--
×
=
V
RING,PK
V
RING,RMS
2
×
=
Z
LOOP
R
LOOP
R
LOAD
R
OUT
+
+
=
R
LOAD
REN
------------
(for North America)
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI3211 | PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION |
| SI3210M-KT | PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION |
| SI3210M-BT | PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION |
| SI3210 | PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION |
| SI3210-BT | PROSLIC PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3233 | 制造商:SILABS 制造商全稱:SILABS 功能描述:PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION |
| Si3233-C-FM | 功能描述:射頻無線雜項 Single-Chan SLIC RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| SI3233-C-FMR | 功能描述:電信線路管理 IC Single-CH SLIC only BJT/inductor dc-dc RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray |
| SI3233M-X-FM | 制造商:SILABS 制造商全稱:SILABS 功能描述:PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION |
| SI3233M-X-GM | 制造商:SILABS 制造商全稱:SILABS 功能描述:PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION |
發(fā)布緊急采購，3分鐘左右您將得到回復。