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參數資料
| 型號： | SI2333DS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI2333DS |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
PA Switch
Si2333DS
Vishay Siliconix
New Product
Document Number: 72023
S-22121—Rev. B, 25-Nov-02
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.032 @ V
GS
= -4.5 V
0.042 @ V
GS
= -2.5 V
0.059 @ V
GS
= -1.8 V
-5.3
-12
- 4.6
- 3.9
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2333DS (E3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
-12
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
- 5.3
-4.1
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 70 C
I
D
-4.2
-3.3
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
-20
A
-1.0
-0.6
T
A
= 25 C
T
A
= 70 C
1.25
0.75
Maximum Power Dissipation
a, b
P
D
0.8
0.48
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
75
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
120
166
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
40
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI2333DST1 | 制造商:Vishay Intertechnologies 功能描述: |
| SI2333DS-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 12V 4.1A 3-Pin TO-236 T/R |
| SI2333DST1E3 | 制造商:Vishay Intertechnologies 功能描述: |
| SI2333DS-T1-E3 | 功能描述:MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2333DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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