參數(shù)資料
型號： SI2335DS
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel 12-V (D-S) MOSFET
中文描述： P溝道12 V的（副）MOSFET的
文件頁數(shù)： 1/4頁
文件大?。?/td> 48K
代理商： SI2335DS
Si2335DS
Vishay Siliconix
New Product
Document Number: 71314
S-02303—Rev. A, 23-Oct-00
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.051 @ V
GS
= –4.5 V
0.070 @ V
GS
= –2.5 V
0.106 @ V
GS
= –1.8 V
–4.0
–12
–3.5
–3.0
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2335DS (E5)*
*Marking Code
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
–12
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
–4.0
–3.2
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 70 C
I
D
–3.3
–2.6
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
–15
A
–1.6
T
A
= 25 C
T
A
= 70 C
1.25
0.75
Maximum Power Dissipation
a, b
P
D
0.8
0.48
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
75
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
120
166
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
40
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI2335DS-T1 功能描述:MOSFET 12V 4.0A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI2335DS-T1-E3 功能描述:MOSFET 12V 4.0A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI2335DS-T1-GE3 功能描述:MOSFET 12V 4.0A 1.25W 51mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI2336DS 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SI2336DS-T1-GE3 功能描述:MOSFET 30V 107A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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