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參數(shù)資料
| 型號(hào)： | SI2343DS |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 42K |
| 代理商： | SI2343DS |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
PA Switch
Si2343DS
Vishay Siliconix
New Product
Document Number: 72079
s-22199—Rev. A, 25-Nov-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.053 @ V
GS
= -10 V
0.086@ V
GS
= -4.5 V
-4.0
-30
-3.1
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2343DS (F3)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
- 4.0
-3.1
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 70 C
I
D
-3.2
-2.5
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
-15
A
-1.0
-0.6
T
A
= 25 C
T
A
= 70 C
1.25
0.75
Maximum Power Dissipation
a, b
P
D
0.8
0.48
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
75
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
120
166
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
40
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2343DS-T1 | 功能描述:MOSFET 30V 4.0A 0.75W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2343DS-T1-E3 | 功能描述:MOSFET 30V 4.0A 1.25W 53 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2343DS-T1-GE3 | 功能描述:MOSFET 30V 4.0A 1.25W 53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si2347DS-T1-GE3 | 功能描述:MOSFET -30V .042Ohm@10V 5A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2351DS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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