參數(shù)資料
型號(hào): SI1405DL
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 1.8-V (G-S) MOSFET
中文描述: P通道的1.8 V(GS)的MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 57K
代理商: SI1405DL
Si1405DL
Vishay Siliconix
New Product
Document Number: 71073
S-01560—Rev. B, 17-Jul-00
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 1.8-V (G-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.125 @ V
GS
= –4.5 V
1.8
–8
0.160 @ V
GS
= –2.5 V
1.6
0.210 @ V
GS
= –1.8 V
1.4
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Marking Code
OB
XX
Lot Traceability
and Date Code
Part # Code
Y
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–8
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
1.8
1.6
A
T
A
= 85 C
1.5
1.2
Pulsed Drain Current
I
DM
5
Continuous Diode Current (Diode Conduction)
a
I
S
–0.8
–0.8
Maximum Power Dissipation
a
T
A
= 25 C
P
D
0.625
0.568
W
T
A
= 85 C
0.400
0.295
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
165
200
C/W
Steady State
180
220
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
105
130
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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