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參數(shù)資料
| 型號： | SI1413DH |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Desiccant Packs; Features:Print: blue ink; Unit size: 1; Media: montmorillonte clay; Form: free flowing even when fully satuated; Pkging: Air tight pails or drums; Pack Quantity:300 RoHS Compliant: NA |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | SI1413DH |
FEATURES
TrenchFET Power MOSFETS: 1.8-V Rated
Thermally Enhanced SC-70 Package
APPLICATIONS
Load Switching
PA Switch
Level Switch
Si1413DH
Vishay Siliconix
New Product
Document Number: 71878
S-20952—Rev. A, 01-Jul-02
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.115 @ V
GS
= –4.5 V
–2.9
–20
0.155 @ V
GS
= –2.5 V
–2.4
0.220 @ V
GS
= –1.8 V
–2.0
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Marking Code
BC
XX
Lot Traceability
and Date Code
Part # Code
Y
D
S
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–20
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
–2.9
–2.3
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
–2.0
–1.6
Pulsed Drain Current
I
DM
–8
A
Continuous Diode Current (Diode Conduction)
a
I
S
–1.4
–0.9
T
A
= 25 C
1.56
1.0
Maximum Power Dissipation
a
T
A
= 85 C
P
D
0.81
0.52
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
60
80
Maximum Junction-to-Ambient
a
Steady State
R
thJA
100
125
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
34
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1413DH-T1 | 功能描述:MOSFET 20V 2.9A 1.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1413DH-T1-E3 | 功能描述:MOSFET 20V 2.9A 1.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1413DH-T1-GE3 | 功能描述:MOSFET P-CH 20V SC-70-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| SI1413EDH | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI1413EDH_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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