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參數(shù)資料
| 型號(hào)： | SI1026X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | SI1026X |
Si1026X
Vishay Siliconix
New Product
Document Number: 71434
S-03518—Rev. A, 23-Apr-01
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
V
(BR)DSS(min)
(V)
r
DS(on)
( )
V
GS(th)
(V)
I
D
(mA)
60
1.40 @ V
GS
= 10 V
1 to 2.5
500
Low On-Resistance: 1.40
Low Threshold: 2 V (typ)
Low Input Capacitance: 30 pF
Fast Switching Speed: 15 ns (typ)
Low Input and Output Leakage
Miniature Package
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Marking Code: E
Top View
3
1
D
2
G
2
S
1
5
2
4
6
D
1
S
2
G
1
SC-89
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
320
305
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
230
220
Pulsed Drain Current
b
I
DM
–650
mA
Continuous Source Current (diode conduction)
a
I
S
450
380
T
A
= 25 C
280
250
Maximum Power Dissipation
a
T
A
= 85 C
P
D
145
130
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1026X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI1026X_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| SI1026X-T1 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1026X-T1-E3 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1026X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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