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參數(shù)資料
| 型號： | SI1021R |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3102A; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI1021R |
Si1021R
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71410
S-21120
—
Rev. C, 01-Jul-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
10 A
–
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
0.25 mA
–
1
–
3.0
V
V
DS
= 0 V, V
GS
=
20 V
10
A
V
DS
= 0 V, V
GS
=
10 V
200
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
10 V, T
J
= 85 C
500
V
DS
= 0 V, V
GS
=
5 V
100
nA
V
DS
=
–
50 V, V
GS
= 0 V
–
25
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
50 V, V
GS
= 0 V, T
J
= 85 C
–
250
V
DS
=
–
10 V, V
GS
=
–
4.5 V
–
50
On-State Drain Current
a
I
D
(on)
V
DS
=
–
10 V, V
GS
=
–
10 V
–
600
mA
V
GS
=
–
4.5 V, I
D
=
–
25 mA
8
Drain-Source On-Resistance
a
r
DS(on)
V
GS
=
–
10 V, I
D
=
–
500 mA
4
V
GS
=
–
10 V, I
D
=
–
500 mA, T
J
= 125 C
6
Forward Transconductance
a
g
fs
V
DS
=
–
10 V, I
D
=
–
100 mA
80
mS
Diode Forward Voltage
a
V
SD
I
S
=
–
200 mA, V
GS
= 0 V
–
1.4
V
Dynamic
Total Gate Charge
Q
g
1.7
Gate-Source Charge
Q
gs
V
DS
=
–
30 V, V
GS
=
–
15 V, I
D
–
500 mA
0.26
nC
Gate-Drain Charge
Q
gd
0.46
Input Capacitance
C
iss
23
Output Capacitance
C
oss
V
=
–
25 V, V
= 0 V, f = 1 MHz
DS
GS
10
pF
Reverse Transfer Capacitance
C
rss
5
Switching
b
Turn-On Time
t
ON
V
DD
=
–
25 V, R
L
= 150
I
D
–
200 mA, V
GEN
=
–
10 V
R
G
= 10
20
Turn-Off Time
t
OFF
35
ns
Notes
a.
b.
Pulse test: PW
Switching time is essentially independent of operating temperature.
300 ms duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1021R | 制造商:Vishay Siliconix 功能描述:MOSFET P SC-75A |
| SI1021R_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI1021R-T1 | 功能描述:MOSFET 60V 0.19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1021R-T1-E3 | 功能描述:MOSFET 60V 0.19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1021R-T1-GE3 | 功能描述:MOSFET 60V 190mA 250mW 700mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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