參數(shù)資料
型號(hào): Si1012X
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 1.8-V (G-S) MOSFET
中文描述: N溝道的1.8 V(GS)的MOSFET的
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 50K
代理商: SI1012X
Si1012R/X
Vishay Siliconix
New Product
Document Number: 71166
S-02464
Rev. A, 25-Oct-00
www.vishay.com
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
r
D
)
0
20
40
60
80
100
0
4
8
12
16
20
0.60
0.80
1.00
1.20
1.40
1.60
50
25
0
25
50
75
100
125
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
0.0
0.8
1.6
2.4
3.2
4.0
0
200
400
600
800
1000
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 250 mA
I
D
Drain Current (mA)
V
GS
= 4.5 V
I
D
V
GS
= 1.8 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
(
r
D
)
0
1
2
3
4
5
0
1
2
3
4
5
6
I
D
= 350 mA
1000
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
V
GS
= 4.5 V
I
D
= 200 mA
V
GS
= 2.5 V
V
GS
= 1.8 V
I
D
= 350 mA
T
J
= 125 C
T
J
= 25 C
T
J
=
55 C
10
100
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