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參數(shù)資料
| 型號(hào)： | Si1012X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | N溝道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | SI1012X |
Si1012R/X
Vishay Siliconix
New Product
Document Number: 71166
S-02464—Rev. A, 25-Oct-00
www.vishay.com
1
N-Channel 1.8-V (G-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
0.70 @ V
GS
= 4.5 V
600
20
0.85 @ V
GS
= 2.5 V
500
1.25 @ V
GS
= 1.8 V
350
High-Side Switching
Low On-Resistance: 0.7
Low Threshold: 0.8 V (typ)
Fast Swtiching Speed: 10 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Ordering Information:
SC-75A (SOT– 416):
Si1012R–Marking Code : C
SC-89 (SOT– 490):
Si1012X–Marking Code: A
Top View
2
1
S
D
G
3
SC-75A or SC-89
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
6
V
T
A
= 25 C
600
500
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 85 C
I
D
400
350
Pulsed Drain Current
a
I
DM
1000
mA
Continuous Source Current (diode conduction)
b
I
S
275
250
T
A
= 25 C
175
150
Maximum Power Dissipation
b
for SC-75
T
A
= 85 C
90
80
T
A
= 25 C
P
D
275
250
mW
Maximum Power Dissipation
b
for SC-89
T
A
= 85 C
160
140
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
b.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board.
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