- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368614 > SI1012R (Vishay Intertechnology,Inc.) N-Channel 1.8-V (G-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI1012R |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | N溝道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 50K |
| 代理商： | SI1012R |
Si1012R/X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71166
S-02464
—
Rev. A, 25-Oct-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
4.5
V
0.5
1.0
A
V
DS
= 16 V, V
GS
= 0 V
0.3
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
5
A
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
700
mA
V
GS
= 4.5 V, I
D
= 600 mA
0.41
0.70
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 500 m A
0.53
0.85
V
GS
= 1.8 V, I
D
= 350 m A
0.70
1.25
Forward Transconductance
a
g
fs
V
DS
= 10
V, I
D
= 400 mA
1.0
S
Diode Forward Voltage
a
V
SD
I
S
= 150 mA, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
750
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 250 mA
75
pC
Gate-Drain Charge
Q
gd
225
Turn-On Delay Time
t
d(on)
5
Rise Time
t
r
V
200 mA, V
GEN
= 4.5 V, R
G
= 10
= 10 V, R = 47
5
Turn-Off Delay Time
t
d(off)
I
D
25
ns
Fall Time
t
f
11
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
200
400
600
800
1000
1200
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 1.8 V
T
C
=
–
55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
1 V
I
D
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si1012X | N-Channel 1.8-V (G-S) MOSFET |
| SI1021R | Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3102A; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| SI1026X | N-Channel 60-V (D-S) MOSFET |
| SI1033X | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI1040X | Logic Level P-channel Load switch with Level Shift; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1012R | 制造商:Vishay Siliconix 功能描述:MOSFET N SC-75A |
| SI1012R/X | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO |
| SI1012R_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.8-V (G-S) MOSFET |
| SI1012R_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.8-V (G-S) MOSFET |
| SI1012R_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.8 V (G-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。