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參數(shù)資料
| 型號： | SGB30N60 |
| 廠商： | SIEMENS A G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 268K |
| 代理商： | SGB30N60 |
SGP30N60
SGB30N60, SGW30N60
7
Mar-00
E
,
S
10A
20A
30A
40A
50A
60A
70A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
4.5mJ
5.0mJ
E
on
*
E
off
E
ts
*
E
,
S
0
10
R
G
,
GATE RESISTOR
20
30
40
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
3.5mJ
4.0mJ
E
ts
*
E
on
*
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11
)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
1ms
10ms 100ms
1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 30A,
R
G
= 11
)
t
p
,
PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(1/W )
0.3681
0.0938
0.0380
τ
,
(s)
=
0.0555
1.26*10
-3
1.49*10
-4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGB30N60_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
| SGB30N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 41A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 41A 250W TO263-3 |
| SGB30N60-E3045A | 制造商:Infineon Technologies AG 功能描述: |
| SGB30UF | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
| SGB30UFSMS | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |
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