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參數(shù)資料
| 型號： | SD56120M |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST家庭 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 208K |
| 代理商： | SD56120M |
1/8
March, 11 2003
SD56120M
RF POWER TRANSISTORS
The LdmoSTFAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION, PUSH-
PULL
P
OUT
= 120 W WITH 13 dB gain @ 860 MHz /32V
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
DESCRIPTION
The SD56120M is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56120M is designed for high gain and broad-
band performance operating in common source
mode at 32 V. Its internal matching makes it ideal for
TV broadcast applications requiring high linearity.
PIN CONNECTION
1
3
5
2
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
4
M252
epoxy sealed
ORDER CODE
SD56120M
BRANDING
SD56120M
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
±
20
V
14
A
236
W
200
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.55
°
C/W
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| SD56150 | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 17 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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