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參數(shù)資料
| 型號： | SDM9926A |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual N-Channel E nhancement Mode F ield E ffect Transistor |
| 中文描述： | 雙N溝道位置nhancement F型爾德首頁ffect晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 351K |
| 代理商： | SDM9926A |
20
Dual N-Channel Enhancement Mode Field Effect Transistor
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
8
V
Drain Current-Continuous @ T
J
=125 C
-Pulsed
I
D
6.0
35
1.7
2
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
62.5
/W
C
SDM9926A
a
a
a
b
(300us Pulse Width)
SamHop Microelectronics Corp.
November , 2002
1
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON) ( m
) TYP
20V
6A
35 @ V
GS
= 2.5V
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
1
S
1
2
G
1
3
S
2
4
G
2
8
7
6
5
D
1
D
1
D
2
D
2
SO-8
1
26 @ V
GS
= 4.0V
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