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參數(shù)資料
| 型號： | SA7016DH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | XO, clock |
| 英文描述： | 1.3GHz low voltage fractional-N synthesizer |
| 中文描述： | PLL FREQUENCY SYNTHESIZER, 1300 MHz, PDSO16 |
| 封裝： | PLASTIC, TSSOP-16 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大小： | 232K |
| 代理商： | SA7016DH |
Philips Semiconductors
Product specification
SA7016
1.3GHz low voltage fractional-N synthesizer
1999 Nov 04
4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
Digital supply voltage
–0.3
+5.5
V
V
DDCP
Analog supply voltage
–0.3
+5.5
V
V
DDCP
–V
DD
Difference in voltage between V
DDCP and
V
DD
(V
DDCP
≥
V
DD
)
–0.3
+2.8
V
V
n
Voltage at pins 1, 2, 5, 6, 11 to 16
–0.3
V
DD
+ 0.3
V
V
1
Voltage at pin 8, 9
–0.3
V
DDCP
+ 0.3
V
V
GND
Difference in voltage between GND
CP
and GND (these pins should
be connected together)
–0.3
+0.3
V
T
stg
Storage temperature
–55
+125
C
T
amb
Operating ambient temperature
–40
+85
C
T
j
Maximum junction temperature
150
C
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j–a
Thermal resistance from junction to ambient in free air
120
K/W
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