參數(shù)資料
型號: S9012M
廠商: 江蘇長電科技股份有限公司
英文描述: TRANSISTOR
中文描述: 晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 195K
代理商: S9012M
C
B E
BACK
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9012M
TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Complementary to S9013M
Excellent h
FE
linearity
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: 2T1
C
2T1
B E
MAXIMUM RATINGS
T
A
=25
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
C
Collector Dissipation
T
J
Junction Temperature
T
stg
Storage Temperature
ELECTRICAL CHARACTERISTICS
unless otherwise noted
Parameter
Value
-40
-25
-5
-500
150
150
-55-150
Units
V
V
V
mA
mW
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
CB
=-40 V ,I
E
=0
V
CE
=-20V ,I
B
=0
V
EB
= -5V , I
C
=0
V
CE
=-1V, I
C
=-50mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
V
CE
=-6V, I
C
= -20mA
f=
30MHz
V
CB
=
-10
V,I
E
=0,f=
1
MHz
-40
-25
-5
V
V
V
μ
A
μ
A
μ
A
V
V
-0.1
-0.1
-0.1
400
-0.6
-1.2
120
Transition frequency
f
T
150
MHz
Collector output capacitance
C
ob
5
pF
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
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