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參數資料
| 型號： | S9015M |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 204K |
| 代理商： | S9015M |
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9015M
TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
High h
FE
and good linearity
Complementary to S9014M
APPLICATION
Low Frequency, Low Noise Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING:
M7
C
M7
B E
MAXIMUM RATINGS T
A
=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
ELECTRICAL CHARACTERISTICS(Ta=25
unless otherwise noted
Parameter
℃
Value
-50
-45
-5
-0.1
0.15
150
-55-150
Units
V
V
V
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100
μ
A, I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -0.1mA, I
B
=0
-45
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50 V , I
E
=0
-0.1
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5V , I
C
=0
-0.1
DC current gain
h
FE
V
CE
=-5V, I
C
= -1mA
200
1000
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-100 mA, I
B
= -10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-100 mA, I
B
=-10mA
-1
V
Transition frequency
f
T
V
CE
=-5V, I
C
= -10mA
f=
30MHz
150
MHz
Collector output capacitance
C
obo
V
CB
=-10V,I
E
=0,f=1MHz
7
pF
Noise figure
NF
V
CE
=-5V,I
c
=-0.2mA,
f=1KHz,R
S
=2K
6
dB
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