
C
WBFBP-03B
B E
1. BASE
2. EMITTER
3. COLLECTOR
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9014M
TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
High h
FE
and good linearity
Complementary to S9015M
APPLICATION
Pre-Amplifier, Low Level & Low Noise
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J6
C
J6
B E
MAXIMUM RATINGS T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
ELECTRICAL CHARACTERISTICS(Ta=25
Parameter
Value
50
45
5
0.1
0.15
150
-55-150
Units
V
V
V
A
W
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
I
C
= 100
μ
A, I
E
=0
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 0.1mA, I
B
=0
45
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
μ
A, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=50 V , I
E
=0
0.1
μ
A
Collector cut-off current
I
CEO
V
CE
=35V , I
B
=0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 4V , I
C
=0
0.1
μ
A
DC current gain
h
FE
V
CE
=5V, I
C
= 1mA
200
1000
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=100 mA, I
B
= 5mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=100 mA, I
B
= 5mA
1
V
Transition frequency
Collector output capacitance
f
T
V
CE
=5V, I
C
= 10mA
150
MHz
pF
C
obo
V
CB
=10V,I
E
=0,f=1MHz
3.5
Noise figure
NF
V
CE
=5V,I
c
=0.2mA,
6
dB