參數(shù)資料
型號: S71WS512NE0BFWZZ
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和移動存儲芯片的CMOS 1.8伏特
文件頁數(shù): 87/142頁
文件大?。?/td> 1996K
代理商: S71WS512NE0BFWZZ
June 28, 2004 S71WS512NE0BFWZZ_00_A1
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
87
A d v a n c e I n f o r m a t i o n
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A23–A14 for the WS256N are don’t care during command sequence unlock cycles.
4. CLK can be either V
IL
or V
IH
.
5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the
Configuration Register.
Figure 21. Asynchronous Program Operation Timings: WE# Latched Addresses
OE#
CE#
Data
Addresses
AVD
WE#
CLK
VCC
555h
PD
tAS
tAVS
tAVH
tA
tWC
tWPH
PA
tVC
tW
tD
tC
In
Progress
tWHWH1
VA
Complete
VA
Program Command Sequence (last two cycles)
Read Status Data
tDS
VIH
VIL
tAVD
A0h
tCS
tCA
相關PDF資料
PDF描述
S71WS512NE0BFWZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512NE0BFWZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512NE0BFWZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512NA0BFEZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512NA0BFEZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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