參數(shù)資料
型號： S71WS512N80BAWZZ3
廠商： Spansion Inc.
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述： 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動存儲芯片的CMOS 1.8伏特
文件頁數(shù)： 61/142頁
文件大小： 1996K
代理商： S71WS512N80BAWZZ3
June 28, 2004 S71WS512NE0BFWZZ_00_A1
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
61
A d v a n c e I n f o r m a t i o n
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded
programming operation or a “Write to Buffer” programming operation so that
data can read from any non-suspended sector. When the Program Suspend com-
mand is written during a programming process, the device halts the
programming operation within 20 μs and updates the status bits. Addresses are
“don’t-cares” when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array
data from any non-suspended sector. The Program Suspend command may also
be issued during a programming operation while an erase is suspended. In this
case, data may be read from any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the SecSi Sector area, then user must use the
proper command sequences to enter and exit this region.
The system may also write the autoselect command sequence when the device
is in Program Suspend mode. The device allows reading autoselect codes in the
suspended sectors, since the codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to Program Suspend mode,
and is ready for another valid operation. See “Autoselect Command Sequence”
for more information.
After the Program Resume command is written, the device reverts to program-
ming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See “Write
Operation Status” for more information.
The system must write the Program Resume command (address bits are “don’t
care”) to exit the Program Suspend mode and continue the programming opera-
tion. Further writes of the Program Resume command are ignored. Another
Notes:
1. See the "
Command Definition Summary
" section for erase command sequence.
2. See the section on DQ3 for information on the sector erase timer.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
S71WS512N80BFEZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71WS512N80BFEZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFEZZ3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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