- 您現在的位置：買賣IC網 > PDF目錄365451 > S71WS512N80BAIZZ2 (Spansion Inc.) Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt PDF資料下載
參數資料
| 型號： | S71WS512N80BAIZZ2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產品（MCP）的閃存和移動存儲芯片的CMOS 1.8伏特 |
| 文件頁數： | 31/142頁 |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512N80BAIZZ2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁
June 28, 2004 S71WS512NE0BFWZZ_00_A1
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
31
A d v a n c e I n f o r m a t i o n
Unlocked—The sector is unprotected and can be changed by a simple com-
mand
In order to achieve these states, three types of “bits” namely Persistent Protec-
tion Bit (PPB), Dynamic Protecton Bit (DYB), and Persistent Protection Bit Lock
(PPB Lock) are used to achieve the desired sector protection scheme
Persistent Protection Bit (PPB)
PPB is used to as an advanced security feature to protect individual sectors from
being programmed or erased thereby providing additional level of protection.
Every sector is assigned a Persistent Protection Bit.
Each PPB is individually programmed through the
PPB Program Command
.
However all PPBs are erased in parallel through the
All PPB Erase Command
.
Prior to erasing, these bits dont have to be preprogrammed. The Embedded Erase
algorithm automatically preprograms and verifies prior to an electrical erase. The
system is not required to provide any controls or timings during these operations.
The PPBs retain their state across power cycles because they are Non-Volatile.
The PPBs have the same endurance as the flash memory.
Persistent Protection Bit Lock (PPB Lock Bit) in Persistent Sector
Protection Mode
PPB Lock Bit is a global volatile bit and provides an additional level of protection
to the sectors. When
programmed (set to “0”)
, all the PPBs are locked and
hence none of them can be changed. When
erased (cleared to “1”)
, the PPBs
are changeable. There is only one PPB Lock Bit in every device. Only a hardware
reset or a power-up clears the PPB Lock Bit. It is to be noted that there is no soft-
ware solution, ie. command sequence to unlock the PPB Lock Bit.
Once all PPBs are set (programmed to “0”) to the desired settings, the PPB Lock
Bit may be set (programmed to “0”). The PPB Lock Bit is set by issuing the PPB
Lock Bit Set Command. Programming or setting the PPB Lock Bit disables pro-
gram and erase commands to all the PPBs. In effect, the PPB Lock Bit locks the
PPBs into their current state. The only way to clear the PPB Lock Bit is to go
through a hardward or powerup reset. System boot code can determine if any
changes to the PPB are needed e.g. to allow new system code to be downloaded.
If no changes are needed then the boot code can disable the PPB Lock Bit to pre-
vent any further changes to the PPBs during system operation.
Dynamic Protection Bit (DYB)
DYB is another security feature used to protect individual sectors from being pro-
grammed or erased inadvertantly. It is a volatile protection bit and is assigned to
each sector. Each DYB can be individually modified through the DYB Set Com-
mand or the DYB Clear Command.
The Protection Status for a particular sector is determined by the status of the
PPB and the DYB relative to that sector. For the sectors that have the PPBs cleared
(erased to “1”), the DYBs control whether or not the sector is protected or unpro-
tected. By issuing the DYB Set or Clear command sequences, the DYBs will be set
(programmed to “0”) or cleared (erased to “1”), thus placing each sector in the
protected or unprotected state respectively. These states are the so-called
Dy-
namic Locked or Unlocked
states due to the fact that they can switch back and
forth between the protected and unprotected states. This feature allows software
to easily protect sectors against inadvertent changes yet does not prevent the
easy removal of protection when changes are needed. The DYBs maybe set (pro-
grammed to “0”) or cleared (erased to “1”) as often as needed.
相關PDF資料 |
PDF描述 |
|---|---|
| S71WS512N80BAIZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFEZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S71WS512N80BAIZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAWZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BFEZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
發(fā)布緊急采購，3分鐘左右您將得到回復。