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| 型號(hào)： | S71GL064A80BFW0B3 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁(yè)數(shù)： | 85/102頁(yè) |
| 文件大?。?/td> | 1606K |
| 代理商： | S71GL064A80BFW0B3 |
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March 31, 2005 S71GL032A_00_A0
S71GL032A Based MCPs
85
A d v a n c e I n f o r m a t i o n
Switching Waveforms
Notes:
1.
To achieve 55-ns performance, the read access should be CE# controlled. In this case t
ACE
is the critical parameter and t
SK
is
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
Device is continuously selected. OE#, CE# = V
IL
.
2.
3.
WE# is High for Read Cycle.
Notes:
1.
To achieve 55-ns performance, the read access should be CE# controlled. In this case t
ACE
is the critical parameter and t
SK
is
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
WE# is High for Read Cycle.
2.
Figure 26. Read Cycle 1 (Address Transition Controlled)
Figure 27. Read Cycle 2 (OE# Controlled)
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
t
RC
tAA
tOHA
t
SK
DATA VALID
t
RC
t
ACE
t
DOE
t
t
LZCE
HIGH IMPEDENCE
t
HZOE
HIGH
IMPEDENCE
ADDRESS
CE
2
t
HZBE
t
LZBE
t
HZCE
DATA OUT
t
DBE
t
SK
CE#1
BHE#/BLE#
OE#
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| S71GL064A80BFW0F0 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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| S71GL064AA0 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71GL064AA0-0K | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
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