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參數(shù)資料
| 型號(hào)： | S71GL064A40BFI0B3 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁數(shù)： | 46/102頁 |
| 文件大?。?/td> | 1606K |
| 代理商： | S71GL064A40BFI0B3 |
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48
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
Advance
Info rmation
bit programming, a modified programming method is required; please contact
your local Spansion representative. Any bit in a write buffer address range
cannot be programmed from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC
pin depending on the particular product. When the system asserts VHH on the
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC
pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH
for operations other than accelerated programming, or device damage may re-
sult. WP# has an internal pullup; when unconnected, WP# is at VIH.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase
and Program Operations–“AC Characteristics” section on page 67 section for pa-
rameters, and Figure 14 for timing diagrams.
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相關(guān)代理商/技術(shù)參數(shù) |
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| S71GL064A40BFI0F0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BFI0F2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BFI0F3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BFW0B0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BFW0B2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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