參數(shù)資料
型號(hào)： S70WS512N00BFWAA0
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 66/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA0
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
67
A d v a n c e I n f o r m a t i o n
12.7
DC Characteristics
( CMOS Compatible)
Notes:
1.
2.
3.
4.
5.
6.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
V
CC
= V
IO
.
CE# must be set high when measuring the RDY pin.
The I
CC
current listed is typically less than 3 mA/MHz, with OE# at V
IH
.
I
CC
active while Embedded Erase or Embedded Program is in progress.
Device enters automatic sleep mode when addresses are stable for t
ACC
+ 20 ns. Typical sleep mode current is equal to
I
CC3
.
V
IH
= V
CC
± 0.2 V and V
IL
> –0.1 V.
Total current during accelerated programming is the sum of V
ACC
and V
CC
currents.
V
ACC
= V
HH
on ACC input.
10. The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document
is Preliminary for the S29W256N.
7.
8.
9.
Parameter
Description (Notes)
Test Conditions (Notes 1, 2, 9)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
± 1
μA
I
LO
Output Leakage Current (
3
)
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
± 1
μA
I
CCB
V
CC
Active burst Read Current
CE# = V
, OE# = V
, WE#
= V
IH
, burst length = 8
54 MHz
27
54
mA
66 MHz
28
60
mA
80 MHz
30
66
mA
CE# = V
, OE# = V
, WE#
= V
IH
, burst length = 16
54 MHz
28
48
mA
66 MHz
30
54
mA
80 MHz
32
60
mA
CE# = V
, OE# = V
, WE#
= V
IH
, burst length = 32
54 MHz
29
42
mA
66 MHz
32
48
mA
80 MHz
34
54
mA
CE# = V
, OE# = V
, WE#
= V
, burst length =
Continuous
54 MHz
32
36
mA
66 MHz
35
42
mA
80 MHz
38
48
mA
I
IO1
V
IO
Non-active Output
OE# = V
IH
20
30
μA
I
CC1
V
CC
Active Asynchronous
Read Current (
4
)
CE# = V
IL
, OE# = V
IH
, WE#
= V
IH
10 MHz
27
36
mA
5 MHz
13
18
mA
1 MHz
3
4
mA
I
CC2
V
CC
Active Write Current (5)
CE# = V
IL
, OE# = V
IH
, ACC
= V
IH
V
ACC
1
5
μA
V
CC
V
ACC
V
CC
19
52.5
mA
I
CC3
V
CC
Standby Current (6, 7)
CE# = RESET# =
V
CC
± 0.2 V
1
5
μA
20
40
μA
I
CC4
V
CC
Reset Current (7)
V
CC
Active Current
(Read While Write) (7)
RESET# = V
IL,
CLK = V
IL
70
150
μA
I
CC5
CE# = V
IL
, OE# = V
IH
, ACC = V
IH
@
5 MHz
50
60
mA
I
CC6
V
CC
Sleep Current (7)
CE# = V
IL
, OE# = V
IH
2
40
μA
I
ACC
Accelerated Program Current (
8
)
CE# = V
IL
, OE# = V
IH,
V
ACC
= 9.5 V
V
ACC
V
CC
6
20
mA
14
20
mA
V
IL
Input Low Voltage
V
IO
= 1.8 V
–0.5
0.4
V
V
IH
V
OL
Input High Voltage
V
IO
= 1.8 V
I
OL
= 100 μA, V
CC
= V
CC
min
= V
IO
V
IO
– 0.4
V
IO
+ 0.4
0.1
V
Output Low Voltage
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
= V
IO
V
IO
– 0.1
V
V
HH
V
LKO
Voltage for Accelerated Program
8.5
9.5
V
Low V
CC
Lock-out Voltage
1.0
1.4
V
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