參數(shù)資料
型號(hào)： S70WS512N00BAWAB3
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 63/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BAWAB3
64
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
12 Electrical Specifications
12.1
Absolute Maximum Ratings
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 125°C
Voltage with Respect to Ground:
All Inputs and I/Os except
as noted below (
Note 1
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to V
IO
+ 0.5 V
V
CC
(
Note 1
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 2.5 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 2.5 V
ACC (
Note 2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 9.5 V
Output Short Circuit Current (
Note 3
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Notes:
1.
Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot V
to –2.0 V
for periods of up to 20 ns. See
Figure 12.1
. Maximum DC voltage on input or I/Os is V
+ 0.5 V. During voltage
transitions outputs may overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 12.2
.
2.
Minimum DC input voltage on pin ACC is -0.5V. During voltage transitions, ACC may overshoot V
to –2.0 V for periods
of up to 20 ns. See
Figure 12.1
. Maximum DC voltage on pin ACC is + 9.5 V, which may overshoot to 10.5 V for periods
up to 20 ns.
3.
No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than
one second.
4.
Stresses above those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
Note:
The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document is
Preliminary for the S29W256N.
12.2
Operating Ranges
W ireless ( W ) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to + 85°C
I ndustrial ( I ) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to + 85°C
Supply Voltages
V
CC
Supply Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+ 1.70 V to + 1.95 V
V
IO
Supply Voltages: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 1.70 V to + 1.95 V
(Contact local sales office for V
IO
= 1.35 to + 1.70 V.)
Note:
Operating ranges define those limits between which the device functionality is guaranteed.
Figure 12.1 Maximum Negative
Overshoot Waveform
Figure 12.2 Maximum Positive
Overshoot Waveform
20 ns
20 ns
+ 0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+ 2.0 V
V
CC
+ 0.5 V
20 ns
1.0 V
相關(guān)PDF資料
PDF描述
S70WS512N00BFWA20 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA22 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA23 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA30 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA32 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWA20 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA22 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA23 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA30 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA32 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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