參數(shù)資料
型號(hào)： S70WS512N00BAWAB3
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 35/93頁
文件大小： 846K
代理商： S70WS512N00BAWAB3
36
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Figure 8.4 Write Buffer Programming Operation
8.5.3
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See
Table 13.1
and
Figure 8.5
) The device does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically programs and verifies the entire memory for an all zero data pat-
tern prior to electrical erase. After a successful sector erase, all locations within the erased sector
contain FFFFh. The system is not required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time-out of no less than t
SEA
occurs. Dur-
ing the time-out period, additional sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence, and the number of sectors may be
from one sector to all sectors. The time between these additional cycles must be less than t
SEA
.
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Issue
Write Buffer Load Command:
Address 555h, Data 25h
Load Word Count to Program
Program Data to Address:
SA = wc
Unlock Cycle 1
Unlock Cycle 2
wc = number of words – 1
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
wc = 0
Write Buffer
Abort Desired
Write Buffer
Abort
Polling Status
= Done
Error
FAIL. Issue reset command
to return to read array mode.
Write to a Different
Sector Address to Cause
Write Buffer Abort
PASS. Device is in
read mode.
Confirm command:
SA 29h
Wait 4
μ
s
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Write Next Word,
Decrement wc:
PA data , wc = wc – 1
RESET. Issue Write Buffer
Abort Reset Command
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S70WS512N00BFWA30 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWA20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA32 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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