參數(shù)資料
型號: S70WS512N00BAWAA3
廠商: Spansion Inc.
英文描述: Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述: 同硅晶片堆疊多芯片產(chǎn)品(MCP)的512兆位(32兆× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 88/93頁
文件大?。?/td> 846K
代理商: S70WS512N00BAWAA3
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
89
A d v a n c e I n f o r m a t i o n
Table 13.5 Device Geometry Definition
Addresses
Data
Description
27h
0019h (WS256N)
0018h (WS128N)
0017h (WS064N)
0001h
0000h
Device Size = 2
N
byte
28h
29h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0006h
0000h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
Number of Erase Block Regions within device
2Ch
0003h
2Dh
2Eh
2Fh
30h
0003h
0000h
0080h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
00FDh (WS256N)
007Dh (WS128N)
003Dh (WS064N)
0000h
0000h
0002h
0003h
0000h
0080h
0000h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 13.6 Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string
PRI
43h
0031h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock (Bits 1-0), 0 = Required, 1 = Not Required
Silicon Technology (Bits 5-2) 0100 = 0.11 μm
Erase Suspend,
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect,
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
08 = Advanced Sector Protection
44h
0034h
45h
0100h
46h
0002h
47h
0001h
48h
0000h
49h
0008h
4Ah
00F3h (WS256N)
007Bh (WS128N)
003Fh (WS064N)
Simultaneous Operation
Number of Sectors in all banks except boot bank
4Bh
0001h
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type,
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page, 04 = 16 Word Page
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
0001h = Dual Boot Device
Program Suspend. 00h = not supported
4Ch
0000h
4Dh
0085h
4Eh
0095h
4Fh
0001h
50h
0001h
相關PDF資料
PDF描述
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA20 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA22 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
S70WS512N00BAWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory