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參數(shù)資料
| 型號： | S70WS512N00BAWAA3 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 39/93頁 |
| 文件大小： | 846K |
| 代理商： | S70WS512N00BAWAA3 |
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40
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
After the erase operation has been suspended, the bank enters the erase-suspend-read mode.
The system can read data from or program data to any sector not selected for erasure. (The de-
vice
erase suspends
all sectors selected for erasure.) Reading at any address within erase-
suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6,
and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to
Table 8.23
for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-
read mode. The system can determine the status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence.
See
Write Buffer Programming
and
Autoselect
for details.
To resume the sector erase operation, the system must write the Erase Resume command. The
bank address of the erase-suspended bank is required when writing this command. Further writes
of the Resume command are ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
The following is a C source code example of using the erase suspend function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x00B0; /* write suspend command */
The following is a C source code example of using the erase resume function. Refer to the
Spansion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
)
for general information on Spansion Flash memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)bank_addr + 0x000 ) = 0x0030; /* write resume command */
/* The flash needs adequate time in the resume state */
8.5.6
Program Suspend/ Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming op-
eration or a
Write to Buffer
programming operation so that data can read from any non-
suspended sector. When the Program Suspend command is written during a programming pro-
cess, the device halts the programming operation within t
PSL
(program suspend latency) and
updates the status bits. Addresses are
don't-cares
when writing the Program Suspend command.
Software Functions and Sample Code
Table 8.16 Erase Suspend
(LLD Function = lld_ EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
Bank Address
00B0h
Table 8.17 Erase Resume
(LLD Function = lld_ EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
Bank Address
0030h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA20 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA22 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BAWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
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