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參數(shù)資料
| 型號： | S3P863A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | S3C8639/C863A/P863A MICROCONTROLLERS |
| 中文描述： | S3C8639/C863A/P863A微控制器 |
| 文件頁數(shù)： | 23/23頁 |
| 文件大?。?/td> | 169K |
| 代理商： | S3P863A |
S3P863A OTP
S3C8639/C863A/P863A
21-4
D.C. ELECTRICAL CHARACTERISTICS
Table 21-4. D.C. Electrical Characteristics
(T
A
= – 40
°
C to + 85
°
C, V
DD
= 3.0 V to 5.5 V)
Parameter
Input High
leakage current
Symbol
I
LIH1
Conditions
Min
–
Typ
–
Max
3
Unit
μA
V
IN
= V
DD
All input pins except X
IN
,
X
OUT
V
IN
= V
DD
;
X
OUT
only
V
IN
= V
DD
;
X
IN
only
V
IN
= 0 V; All input pins except X
IN
,
X
OUT
,
RESET
, Hsync-I and Vsync-I
V
IN
= 0 V; X
OUT
only
V
IN
= 0 V; X
IN
only
V
OUT
= V
DD
I
LIH2
I
LIH3
I
LIL1
–
–
20
2.5
6
20
Input Low
leakage current
–
–
– 3
I
LIL2
I
LIL3
I
LOH1
–
–
– 20
– 2.5
– 6
– 20
Output High
leakage current
–
–
3
Output Low
leakage current
I
LOL1
V
OUT
= 0 V
–
–
– 3
Pull-up resistor
R
U1
V
IN
= 0 V; V
DD
= 5 V
±
10%
Port 3.7–3.4
20
47
80
k
R
U2
V
IN
= 0 V; V
DD
= 5 V
±
10%
RESET
only
150
280
480
Pull-down
resistor
R
D
V
IN
= 0 V; V
DD
= 5 V
±
10%
Hsync-I and Vsync-I
150
300
500
Supply current
(note)
I
DD1
V
DD
= 5 V
±
10%
Operation mode; 12 MHz crystal
C1 = C2 = 22pF
–
10
20
mA
I
DD2
V
DD
= 5 V
±
10%
Idle mode; 12 MHz crystal
C1 = C2 = 22pF
4
8
I
DD3
V
DD
= 5 V
±
10%
Stop mode
100
150
μA
NOTE:
Supply current does not include drawn internal pull-up/pull-down resistors and external loads of output.
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