參數(shù)資料
型號(hào): S3P863A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: S3C8639/C863A/P863A MICROCONTROLLERS
中文描述: S3C8639/C863A/P863A微控制器
文件頁數(shù): 22/23頁
文件大?。?/td> 169K
代理商: S3P863A
S3C8639/C863A/P863A
S3P863A OTP
21-3
Table 21-1. Descriptions of Pins Used to Read/Write the EPROM
Main Chip
During Programming
Pin Name
P1.0
Pin Name
SDAT
Pin No.
9 (4)
I/O
I/O
Function
Serial data pin. Output port when reading and input
port when writing. Can be assigned as a
Input/push-pull output port.
P1.1
SCLK
10 (5)
I
Serial clock pin. Input only pin.
TEST
V
PP
(TEST)
15 (10)
I
Power supply pin for EPROM cell writing (indicates
that OTP enters into the writing mode). When 12.5
V is applied, OTP is in writing mode and when 5 V
is applied, OTP is in reading mode. (Option)
RESET
V
DD1
/V
SS1
RESET
V
DD1
/V
SS1
18 (13)
I
Chip Initialization
Logic power supply pin. V
DD
should be tied to +5 V
during programming.
11/12 (6/7)
I
NOTE:
Parentheses indicate 44-QFP OTP pin number.
Table 21-2. Comparison of S3P863A and S3C8639/C863A Features
Characteristic
Program Memory
Operating Voltage (V
DD
)
S3P863A
S3C8639/C863A
48-Kbyte EPROM
32/48-Kbyte mask ROM
3.0 V to 5.5 V
3.0 V to 5.5V
OTP Programming Mode
V
DD
= 5 V, V
PP
(TEST)=12.5V
Pin Configuration
42SDIP, 44QFP
42SDIP, 44QFP
EPROM Programmability
User Program 1 time
Programmed at the factory
OPERATING MODE CHARACTERISTICS
When 12.5 V is supplied to the V
PP
(TEST) pin of the S3P863A, the EPROM programming mode is entered. The
operating mode (read, write, or read protection) is selected according to the input signals to the pins listed in
Table 21-3 below.
Table 21-3. Operating Mode Selection Criteria
V
DD
V
PP
(TEST)
REG/MEM
Address (A15–A0)
R/W
Mode
5 V
5 V
0
0000H
1
EPROM read
12.5 V
0
0000H
0
EPROM program
12.5 V
0
0000H
1
EPROM verify
12.5 V
1
0E3FH
0
EPROM read protection
NOTE:
"0" means Low level; "1" means High level.
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