參數(shù)資料
型號： S29NS256N0SBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48
封裝： 10 X 11 MM, LEAD FREE, FBGA-48
文件頁數(shù)： 85/86頁
文件大小： 1036K
代理商： S29NS256N0SBJW003
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
83
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Updated max value for 8 Kword Sector Erase Time
Updated typical and max values for Chip Programming Time
24.9
Revision A7 (September 16, 2005)
Ordering Information
Updated the Package Type options
Valid Combinations table
Updated entire table to show new options
24.10 Revision A8 (September 23, 2005)
Dynamic Protection Bit (DYB)
Added note: Dynamic protection bits revert back to their default values after programming the device “Lock
Register.”
Lock Register Table
Added Note: When the device lock register is programmed (PPB mode lock bit is programmed, password
mode lock bit programmed, or the Secured Silicon lock bit is programmed) all DYBs revert to the power-on
default state.
24.11 Revision A9 (November 15, 2005)
Write Buffer Programming Operation
Updated the flowchart
24.12 Revision A10 (March 23, 2006)
Asynchronous Read AC Characteristics table
Updated the minimum specifications of t
AAVDH
for both speed bins.
Global Change
Changed V
PP
to ACC
24.13 Revision A11 (April 20, 2006)
Global Change
Changed layout and font
Absolute Maximum Ratings
Updated Figure 13.1 and 13.2
24.14 Revision A12 (June 13, 2006)
Global Change
Publication Identification number was incorrectly set to S29NS-N_01 for revision 11 instead of S29NS-N_00.
It is corrected in this revision. The document file name was not affected by this error.
Added a note to Table 8.1 Device Bus Operations
Added a note to Table 11.1 Configuration Register
Added a note to section 11.9 Erase Suspend/Erase Resume Commands
相關(guān)PDF資料
PDF描述
S29NS-N Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128JPLBFW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBAW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS256P 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256P0PBJW000 功能描述:閃存 256M (16MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29NS256P0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256P0SBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29NS256P0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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