參數(shù)資料
型號: S29NS256N0SBJW003
廠商: SPANSION LLC
元件分類: DRAM
英文描述: Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述: 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48
封裝: 10 X 11 MM, LEAD FREE, FBGA-48
文件頁數(shù): 45/86頁
文件大?。?/td> 1036K
代理商: S29NS256N0SBJW003
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
43
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
11.6
Write Buffer Programming Command Sequence
Write Buffer Programming Sequence allows for faster programming as compared to the standard Program
Command Sequence. See
Table 11.3 on page 43
for the program command sequence.
Note
Write buffer addresses must be loaded in sequential order.
Table 11.3
Write Buffer Command Sequence
Sequence
Address
Data
Comment
Unlock Command 1
555
00AA
Not required in the Unlock Bypass mode
Unlock Command 2
2AA
0055
Same as above
Write Buffer Load
Starting
Address
0025h
Specify the Number of Program Locations
Starting
Address
Word Count
Number of locations to program minus 1
Load 1st data word
Starting
Address
Program
Data
All addresses must be within write-buffer-page
boundaries, but do not have to be loaded in any order
Load next data word
Write Buffer
Location
Program
Data
Same as above
...
...
...
Same as above
Load last data word
Write Buffer
Location
Program
Data
Same as above
Write Buffer Program Confirm
Sector Address
0029h
This command must follow the last write buffer
location loaded, or the operation will ABORT
Device goes busy
Status monitoring through DQ pins (Perform Data
Bar Polling on the
Last Loaded Address
)
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