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參數(shù)資料
| 型號： | S29NS256N0SBJW003 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48 |
| 封裝： | 10 X 11 MM, LEAD FREE, FBGA-48 |
| 文件頁數(shù)： | 30/86頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS256N0SBJW003 |
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28
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 9.2
System Interface String
Addresses
Data
Description
S29NS256N
S29NS128N
S29NS064N
1Bh
0017h
V
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
V
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
ACC Min. voltage (00h = no ACC pin present) Refer to 4Dh
1Eh
0000h
ACC Max. voltage (00h = no ACC pin present) Refer to 4Eh
1Fh
0006h
Typical timeout per single byte/word write 2
N
μs
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
20h
0009h
21h
000Ah
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0003h
Max. timeout for byte/word write 2
N
times typical
24h
0001h
Max. timeout for buffer write 2
N
times typical
25h
0002h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 9.3
Device Geometry Definition
Addresses
Data
Description
S29NS256N
S29NS128N
S29NS064N
27h
0019h
0018h
0017h
Device Size = 2N byte
28h
0001h
Flash Device Interface description (refer to CFI publication 100)
29h
0000h
2Ah
0006h
Max. number of bytes in multi-byte write = 2N (00h = not supported)
2Bh
0000h
2Ch
0002h
Number of Erase Block Regions within device
2Dh
00FEh
007Eh
007Eh
Erase Block Region 1 Information (refer to the CFI specification or
CFI publication 100)
2Eh
0000h
0000h
0000h
2Fh
0000h
0000h
0000h
30h
0002h
0002h
0001h
31h
0003h
0007h
Erase Block Region 2 Information
32h
0000h
0000h
33h
0080h
0020h
34h
0000h
0000h
35h
0000h
Erase Block Region 3 Information
36h
0000h
37h
0000h
38h
0000h
39h
0000h
Erase Block Region 4 Information
3Ah
0000h
3Bh
0000h
3Ch
0000h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS-N | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128JPLBFW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBAW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS256P | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256P0PBJW000 | 功能描述:閃存 256M (16MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29NS256P0PBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256P0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256P0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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