- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365400 > S29NS256N0SBJW002 (SPANSION LLC) Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | S29NS256N0SBJW002 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48 |
| 封裝： | 10 X 11 MM, LEAD FREE, FBGA-48 |
| 文件頁(yè)數(shù)： | 71/86頁(yè) |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS256N0SBJW002 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)當(dāng)前第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
69
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
19.5
Erase/Program Operations
Notes
1. Not 100% tested.
2. See the
Erase and Programming Performance
section for more information.
3. Does not include the preprogramming time.
Parameter
Description
(80 MHz)
(66 MHz)
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
45
45
ns
t
AVWL
t
AS
Address Setup Time
Min
4
4
ns
t
WLAX
t
AH
Address Hold Time
Min
6
6
ns
t
AVDP
AVD# Low Time
Min
8
ns
t
DVWH
t
DS
Data Setup Time
Min
20
25
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
Typ
0
ns
t
ELWL
t
CS
CE# Setup Time to WE#
Typ
8
8
ns
t
WHEH
t
CH
CE# Hold Time
Typ
0
ns
t
WLWH
t
WP
/t
WRL
Write Pulse Width
Typ
30
ns
t
WHWL
t
WPH
Write Pulse Width High
Typ
20
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
ACC
ACC Rise and Fall Time
Min
500
ns
t
VPS
ACC Setup Time (During Accelerated Programming)
Min
1
μs
t
VCS
V
CC
Setup Time
Min
50
μs
t
SEA
Sector Erase Accept Time-out
Max
50
μs
t
ESL
Erase Suspend Latency
Max
35
μs
t
PSL
Program Suspend Latency
Max
35
μs
t
ERS
Erase Resume to Erase Suspend
Min
30
μs
t
PRS
Program Resume to Program Suspend
Min
30
μs
t
PSP
Toggle Time During Programming Within a Protected Sector
Typ
1
μs
t
ASP
Toggle Time During Sector Protection
Typ
100
μs
t
WEP
Noise Pulse Margin on WE#
Max
3
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS256N0SBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS-N | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128JPLBFW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBAW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS256N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS256P | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256P0PBJW000 | 功能描述:閃存 256M (16MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29NS256P0PBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS256P0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。