參數(shù)資料
型號(hào)： S29NS128JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 75/85頁
文件大?。?/td> 799K
代理商： S29NS128JPLBFW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
71
D a t a S h e e t
S29NS032J and S29NS016J
VDE044—44-Ball Very Thin Fine-Pitch Ball Grid Array ( FBGA) 7.7 x
6.2 mm Package
Note:
For reference only. BSC is an ANSI standard for Basic Space Centering.
PACKAGE
VDE 044
JEDEC
N/A
7.70 mm x 6.20 mm NOM
PACKAGE
S
YMBOL
MIN
NOM
MAX
NOTE
A
0.86
---
1.00
OVERALL THICKNE
SS
A1
0.20
---
---
BALL HEIGHT
A2
0.66
0.71
0.76
BODY THICKNE
SS
D
7.65
7.7
7.75
BODY
S
IZE
E
6.15
6.2
6.25
BODY
S
IZE
D1
4.50
BALL FOOTPRINT
E1
1.50
BALL FOOTPRINT
MD
10
ROW MATRIX
S
IZE D DIRECTION
ME
4
ROW MATRIX
S
IZE E DIRECTION
N
φ
b
e
44
TOTAL BALL COUNT
0.25
0.30
0.35
BALL DIAMETER
0.50 B
S
C.
BALL PITCH
S
D /
S
E
0.25 B
S
C.
S
OLDER BALL PLACEMENT
DEPOPULATED
S
OLDER BALL
S
3308.1 \ 16-038.9L
NOTE
S
:
1. DIMEN
S
IONING AND TOLERANCING PER A
S
ME Y14.5M-1994.
2. ALL DIMEN
S
ION
S
ARE IN MILLIMETER
S
.
3. BALL PO
S
ITION DE
S
IGNATION PER JE
S
D 95-1,
S
PP-010 (EXCEPT
A
S
NOTED).
4. e REPRE
S
ENT
S
THE
S
OLDER BALL GRID PITCH.
5.
S
YMBOL "MD" I
S
THE BALL ROW MATRIX
S
IZE IN THE
"D" DIRECTION.
S
YMBOL "ME" I
S
THE BALL COLUMN MATRIX
S
IZE IN THE
"E" DIRECTION.
N I
S
THE TOTAL NUMBER OF
S
OLDER BALL
S
.
6
DIMEN
S
ION "
b
" I
S
MEA
S
URED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
S
D AND
S
E ARE MEA
S
URED WITH RE
S
PECT TO DATUM
S
A AND B AND DEFINE THE PO
S
ITION OF THE CENTER
S
OLDER BALL IN THE OUTER ROW.
WHEN THERE I
S
AN ODD NUMBER OF
S
OLDER BALL
S
IN
THE OUTER ROW PARALLEL TO THE D OR E DIMEN
S
ION,
RE
S
PECTIVELY,
S
D OR
S
E = 0.000.
WHEN THERE I
S
AN EVEN NUMBER OF
S
OLDER BALL
S
IN
THE OUTER ROW,
S
D OR
S
E = e/2
8. NOT U
S
ED.
9. "+" INDICATE
S
THE THEORETICAL CENTER OF DEPOPULATED
BALL
S
.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LA
S
ER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEAN
S
.
INDEX MARK
A1 CORNER
S
IDE VIEW
TOP VIEW
D
A
10
A2
A1
E
S
EATING PLANE
C
0.10
C
B
A
C
0.08
BOTTOM VIEW
NF1
NF3
2
1
3
4
5
6
9
8
7
10
A
B
NF2
C
D
NF4
D1
S
D
φ
b
E1
S
E
1.00
e
A
M
M
C
C
φ
0.05
φ
0.15
B
A1 CORNER
7
7
6
1.00
相關(guān)PDF資料
PDF描述
S29NS032J0PBAW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS128JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128JPLBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128N 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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