參數(shù)資料
型號(hào)： S29NS128JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 4/85頁(yè)
文件大?。?/td> 799K
代理商： S29NS128JPLBFW002
iv
S29NS-J
S29NS-J_01_A10 March 22, 2006
D a t a S h e e t
11 mm Package ................................................................................................69
S29NS064J ............................................................................................................70
VDD044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 9.2 x
8 mm Package .................................................................................................70
S29NS032J and S29NS016J .................................................................................71
VDE044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 7.7 x
6.2 mm Package ................................................................................................71
Table 22. Daisy Chain Part for 128Mbit 110 nm Flash Products
(VDC048, 10 x 11 mm) ...................................................... 72
Table 23. VDC048 Package Information ................................ 72
Table 24. VDC048 Connections ........................................... 72
Figure 25. VDC048 Daisy Chain Layout
(Top View, Balls Facing Down) ............................................. 73
Appendix B: Daisy Chain Information . . . . . . . . .74
Table 25. Daisy Chain Part for 64Mbit 110 nm Flash Products
(VDD044, 9.2 x 8 mm) ....................................................... 74
Table 26. VDD044 Package Information ................................ 74
Table 27. VDD044 Connections ............................................ 74
Figure 26. VDD044 Daisy Chain Layout
(Top View, Balls Facing Down) ............................................ 75
Appendix C: Daisy Chain Information . . . . . . . . .76
Table 28. Daisy Chain Part for 32 and 16 Mbit 110 nm Flash Prod-
ucts (VDE044, 7.7 x 6.2 mm) .............................................. 76
Table 29. VDE044 Package Information ................................ 76
Table 30. VDE044 Connections ............................................ 76
Figure 27. VDE044 Daisy Chain Layout
(Top View, Balls Facing Down) ............................................ 77
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .78
相關(guān)PDF資料
PDF描述
S29NS032J0PBAW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS128JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128JPLBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128N 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*