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參數(shù)資料
| 型號： | S29NS128JPLBFW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 45/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS128JPLBFW002 |
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March 22, 2006 S29NS-J_00_A10
S29NS-J
41
D a t a S h e e t
Table 16. Accelerated Sector Erase Groups, S29NS032J
Table 17. Accelerated Sector Erase Groups, S29NS016J
Use the following procedure to perform accelerated sector group erase:
1.
Unlock all sectors in a sector group to be erased using the sector lock/unlock command se-
quence. All sectors that remain locked will not be erased.
Apply 12 V to the A
cc
input. This voltage must be applied at least 1 μs before executing step
3
.
Write 80h to any address within a sector group to be erased.
Write 10h to any address within a sector group to be erased.
Monitor status bits DQ2/DQ6 or DQ7 to determine when erasure is complete, just as in the
standard erase operation. See
Write Operation Status
for further details.
Lower A
cc
from 12 V to V
CC
.
Relock sectors as required.
2.
3.
4.
5.
6.
7.
SA0–SA3
SA16-SA19
SA32-SA35
SA48-SA51
SA4–SA7
SA20-SA23
SA36-SA39
SA52-SA55
SA8–SA11
SA24-SA27
SA40-SA43
SA56–SA59
SA12-SA15
SA28-SA31
SA44-SA47
SA60–SA62
SA0–SA1
SA8-SA9
SA16-SA17
SA24-SA25
SA2–SA3
SA10-SA11
SA18-SA19
SA26-SA27
SA4–SA5
SA12-SA13
SA20-SA21
SA28-SA29
SA6–SA7
SA14-SA15
SA24-SA25
SA30
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS032J0PBAW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS128JPLBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128JPLBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128N | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
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