參數(shù)資料
型號(hào)： S29NS032J0PBFW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù)： 84/85頁
文件大小： 799K
代理商： S29NS032J0PBFW003
80
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
DQ6: Toggle Bit I
Replaced “100 μs” with “t
ASP
”.
Replaced “1 μs” with “t
PSP
”.
DQ3: Sector Erase Timer
Replaced “50 μs” with “t
SEA
’.
Erase and Programming Performance
Updated “Accelerated Chip Erase Time” as per the following:
Distinctive Characteristics
Deleted the following:
“Minimum 100,000 erase cycle guarantee per sector”.
“20-year data retention”.
“Reliable operation for the life of the system”.
Erase and Programming Performance
In Note 2 changed “100,000” to “1,000,000”.
8-, 16-, and 32-W ord Linear Burst Address W rap Around
Updated drawing.
Unlock Bypass Command Sequence
Removed “The host system may also initiate the chip erase and sector erase sequences in the
unlock bypass mode. The erase command sequences are four cycles in length instead of six
cycles.”
Command Definitions
Removed the Unlock Bypass “sector erase” and “chip erase” rows.
Table 18, “ Command Definitions”
Removed Unlock Bypass Sector Erase section.
Removed Chip Erase section.
W P# Boot Sector Protection
Updated 2nd paragraph as follows: “If using the Unlock Bypass feature: on the 2nd program cy-
cle, after the Unlock Bypass command is written, the WP# signal must be asserted on the 2nd
cycle.”
Global
Replaced all “AMD” references with “
contact your local Spansion sales office”.
Chip Erase Command Sequence
Removed “The host system may also initiate the chip erase command sequence while the device
is in the unlock bypass mode. The command sequence is two cycles in length instead of six cycles.
Sector Erase Command Sequence
Replaced “50 μs” with “t
SEA”.
Original
Updated
128Mb
45
50
64Mb
30
25
32Mb
TBD
12.5
16Mb
TBD
6.25
相關(guān)PDF資料
PDF描述
S29NS032J0PBJW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBAW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032J0PBJW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBAW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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