參數(shù)資料
型號: S29NS032J0PBFW000
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
封裝: 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù): 52/85頁
文件大?。?/td> 799K
代理商: S29NS032J0PBFW000
48
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sec-
tors are selected for erasure. Thus, both status bits are required for sector and mode information.
Refer to
Table 20
to compare outputs for DQ2 and DQ6.
See the following for additional information: (toggle bit flowchart),
DQ6: Toggle Bit I
(descrip-
tion), 19 (toggle bit timing diagram), and
Table 19
(compares DQ2 and DQ6).
S
TART
No
Ye
s
Ye
s
DQ5 = 1
No
Ye
s
DQ6 = Toggle
No
Re
a
d Byte
(DQ0-DQ7)
Addre
ss
= VA
DQ6 = Toggle
Re
a
d Byte Twice
(DQ 0-DQ7)
Adrde
ss
= VA
Re
a
d Byte
(DQ0-DQ7)
Addre
ss
= VA
FAIL
PA
SS
Note:
The system should recheck the toggle bit even if DQ5 =
“1” because the toggle bit may stop toggling as DQ5 changes
to “1.” See the subsections on DQ6 and DQ2 for more
information.
Figure 4. Toggle Bit Algorithm
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