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參數(shù)資料
| 型號(hào)： | S29GL128N90TFIV23 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | MO-142BEC, LEAD FREE, TSOP-56 |
| 文件頁(yè)數(shù)： | 99/100頁(yè) |
| 文件大小： | 952K |
| 代理商： | S29GL128N90TFIV23 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
97
D a t a S h e e t
Advance I nformation on S9GL-P AC Characteristics
Changed speed specifications and units of measure for t
READY
, t
RP
, t
RH
, and t
RPD
. Changed
specifications on t
READY
from maximum to minimum.
Revision A9 (June 15, 2005)
Ordering I nformation table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced V
IL
lines for I
CC4
, I
CC5
, I
CC6
.
Connection Diagrams
Modified 56-Pin Standard TSOP (pg 8). Modified 64-ball Fortified BGA.
Advance I nformation on S9GL-P AC Characteristics
Added second table.
Revision B0 (April 22, 2006)
Global
Changed document status to Full Production.
Ordering I nformation
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combina-
tions table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit ( PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the
Factory
Modified 1st bullet text.
W rite Protect ( W P# )
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
W ord Program Command Sequence
Modified fourth paragraph.
W rite Buffer Programming
Deleted note from eighth paragraph.
Program Suspend/ Program Resume Command Sequence
Corrected typos in first paragraph.
Lock Register Command Set Definitions
Modified fifth paragraph.
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| S29GL256N10FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FAIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI010 IC 128M PAGE-MODE F |
| S29GL128P10FAI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI020 IC 128M FLASH BGA |
| S29GL128P10FAI022 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Tape and Reel |
| S29GL128P10FAIR20 | 制造商:Spansion 功能描述: |
| S29GL128P10FFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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