- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄365395 > S29GL128N90TFIV23 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL128N90TFIV23 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | MO-142BEC, LEAD FREE, TSOP-56 |
| 文件頁(yè)數(shù)： | 89/100頁(yè) |
| 文件大小： | 952K |
| 代理商： | S29GL128N90TFIV23 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)當(dāng)前第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
87
D a t a S h e e t
Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
CC
, 10,000 cycles, checkerboard
pattern.
2. Under worst case conditions of 90°C, V
CC
= 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
words program faster than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See
Table 12 on page 63
and
Table 14 on page 65
for further information on command definitions.
TSOP Pin and BGA Package Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming prior to
erasure
(Note 5)
Chip Erase Time
S29GL128N
64
256
sec
S29GL256N
128
512
S29GL512N
256
1024
Total Write Buffer
Programming Time
(Note 3)
240
μs
Excludes system level
overhead
(Note 6)
Total Accelerated Effective
Write Buffer Programming
Time
(Note 3)
200
μs
Chip Program Time
(Note 4)
S29GL128N
123
sec
S29GL256N
246
S29GL512N
492
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL256N10FAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FAI022 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FAIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL256N10FFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI010 IC 128M PAGE-MODE F |
| S29GL128P10FAI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI020 IC 128M FLASH BGA |
| S29GL128P10FAI022 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Tape and Reel |
| S29GL128P10FAIR20 | 制造商:Spansion 功能描述: |
| S29GL128P10FFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。